Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors
- 28 February 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 98 (9), 092112
- https://doi.org/10.1063/1.3560463
Abstract
This letter investigates the impact of static and dynamic stress on threshold voltage instability in ultrathin n-channel metal-oxide-semiconductor field-effect transistors with hafnium-based gate stacks. Experimental results indicate shift under dynamic stress is more serious than that under static stress due to charge trapping within the high-k dielectric. Capacitance-voltage techniques demonstrated that electron trapping under dynamic stress was located in the high-k dielectric near the source/drain overlap region rather than throughout the overall dielectric layer. This implies in real circuit operation, the phenomenon of electrons trapped in high-k near the source/drain overlap is the main issue affecting instability.
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