Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
Open Access
- 1 July 2021
- journal article
- research article
- Published by AIP Publishing in AIP Advances
- Vol. 11 (7), 075013
- https://doi.org/10.1063/5.0053865
Abstract
Selective area growth of cubic gallium nitride is investigated in a plasma assisted molecular beam epitaxy setup. 380 mu m thick silicon (001) and 10 mu m thick 3C-silicon carbide (001), grown on 500 mu m silicon (001), were used as substrates and structured with silicon dioxide masks. Selective area growth on silicon and 3C-silicon carbide was tested for both thermal and plasma deposited oxides. Multiple growth series showed that gallium nitride coverage of silicon dioxide vanished at growth temperatures of 870 degrees C for silicon substrates and at a surface temperature of 930 degrees C for 3C-silicon carbide substrates. Whereas gallium nitride is grown in its hexagonal form on silicon substrates, phase pure cubic gallium nitride could selectively be grown on the 3C-silicon carbide template. The cubic phase is verified by high resolution x-ray diffraction and low temperature photoluminescence measurements. The photoluminescence measurements prove that gallium nitride condensed selectively on the 3C-silicon carbide surfaces uncovered by silicon dioxide. (c) 2021 Author(s).Funding Information
- Deutsche Forschungsgemeinschaft (418748882)
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