Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation
- 1 July 2006
- journal article
- Published by Institute of Electronics, Information and Communications Engineers (IEICE) in IEICE Transactions on Electronics
- Vol. E89-C (7), 1057-1063
- https://doi.org/10.1093/ietele/e89-c.7.1057