Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)
- 25 July 2016
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 109 (4), 042103
- https://doi.org/10.1063/1.4960005
Abstract
Here we investigate the hexagonal-to-cubic phase transition in metalorganic-chemical-vapor-deposition-grown gallium nitride enabled via silicon (100) nano-patterning. Electron backscatter diffraction and depth-resolved cathodoluminescence experiments show complete cubic phase GaN surface coverage when GaN deposition thickness (hc), etch depth (td), and opening width (p) obey hc≈1.06p−0.75td; in line with a geometrical model based on crystallography. Cubic GaN uniformity is studied via electron backscatter diffraction and cathodoluminescence measurements. Atomic force microscopy reveals a smooth cubic GaN surface. Phase-transition cubic GaN shows promising optical and structural quality for integrated photonic devices.Keywords
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