A study of noise in surface and buried channel SiGe MOSFETs with gate oxide grown by low temperature plasma anodization
- 31 December 2002
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 46 (12), 2053-2061
- https://doi.org/10.1016/s0038-1101(02)00175-2
Abstract
No abstract availableKeywords
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