Critical discussion on unified 1/f noise models for MOSFETs
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (11), 2146-2152
- https://doi.org/10.1109/16.877177
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
- A comprehensive study of MOSFET electron mobility in both weak and strong inversion regimesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Accurate modeling of Coulombic scattering, and its impact on scaled MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A general theory of phase noise in electrical oscillatorsIEEE Journal of Solid-State Circuits, 1998
- Effect of gate-field dependent mobility degradation on distortion analysis in MOSFETsIEEE Transactions on Electron Devices, 1997
- On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentrationIEEE Transactions on Electron Devices, 1994
- Noise as a diagnostic tool for quality and reliability of electronic devicesIEEE Transactions on Electron Devices, 1994
- A physics-based MOSFET noise model for circuit simulatorsIEEE Transactions on Electron Devices, 1990
- Investigation and modeling the surface mobility of MOSFETs from -25 to +150 degrees CIEEE Transactions on Electron Devices, 1988
- Modified 1/f trapping noise theory and experiments in MOS transistors biased from weak to strong inversion—Influence of interface statesIEEE Transactions on Electron Devices, 1984
- Experimental studies on 1/f noiseReports on Progress in Physics, 1981