A high current density SOI-LIGBT with Segmented Trenches in the Anode region for suppressing negative differential resistance regime

Abstract

A SOI-LIGBT with Segmented Trenches in the Anode region (STA-LIGBT) is proposed and compared with the separated shorted-anode LIGBT (SSA-LIGBT) for the first time. The proposed STA-LIGBT structure features that there are segmented trenches located between the P⁺ anode and the segmented N⁺ anodes. By employing the segmented trenches, the resistance between the P⁺ anode and the shorted N⁺ anode is significantly increased, which effectively suppresses the negative differential resistance (NDR). The experiments show that the STA-LIGBT with its blocking voltage of 540V can achieve a current density (J_C) of 247 A/cm² when the gate voltage is 10V and the anode voltage is 3V. With the same the NDR regime (the snapback voltage is 1.3V), the current density (J_C) of the STA-LIGBT is about 170% of that of the SSA-LIGBT. The fabrication of the segmented trenches is compatible with the trench isolation process and no extra or complicated processes are needed.