700 V segmented anode LIGBT with low on-resistance and onset Voltage

Abstract

A 700 V SA-LIGBT structure for high voltage applications is presented. An important feature is that the device has a good tradeoff among onset voltage, on-resistance and turn-off speed. This is realized mainly by two methods: large extent of P+ diffusion paralleled with N+ diffusion and the introduction of N-buffer layer in the anode. A robust SA-LIGBT is fabricated successfully with a breakdown voltage of 787 V, specific on-resistance of 53 mohm-cm , onset voltage of 1 V and turn-off time of 310 ns. The device is realized easily in a single crystal without epitaxial layer or buried layer.