600V single chip inverter IC with new SOI technology
- 1 June 2014
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10636854,p. 418-421
- https://doi.org/10.1109/ispsd.2014.6856065
Abstract
A 600V three-phase single chip inverter IC has been developed using a new SOI technology instead of conventional 500V Dielectric Isolation (DI) technology. In this new technology, 600V high voltage devices were materialized with a newly introduced poly-Si field plate and a multi diffusion region in order to reduce the electric field. A new IGBT accomplishes high current density with an on-resistance of 1.8Ωmm 2 by using a multi emitter structure and an n-type well layer that reduces JFET resistance between emitter channels. Moreover, a thin Si layer and universal contact structure for fast extraction of excess carriers contribute to low switching losses. The turn-off energy loss of the IGBT is 54% of that of a conventional one at 135°C. The developed inverter IC has a maximum output voltage of 600V and a maximum output current 1A. Compared to the conventional 500V IC, the operational power consumption is reduced from 2.6W to 2.3W.Keywords
This publication has 7 references indexed in Scilit:
- 200V superjunction lateral IGBT fabricated on partial SOIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- 700V thin SOI-LIGBT with high current capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2013
- Three-Input Type Single-Chip Inverter IC including a Function to Generate Six Signals and Dead TimePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase inverter ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Improvement in lateral IGBT design for 500 V 3 A one chip inverter ICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 500 V 1A 1-chip inverter IC with a new electric field reduction structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Novel low-loss and high-speed diode utilizing an "Ideal" ohmic contactIEEE Transactions on Electron Devices, 1982