Photothermal Characterization of Electrochemical Etching Processed n-Type Porous Silicon
- 22 December 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 79 (25), 5022-5025
- https://doi.org/10.1103/physrevlett.79.5022
Abstract
The room temperature thermal diffusivity evolution of electrochemically formed porous silicon as a function of the etching time is investigated. The measurements were carried out using the open-cell photoacoustic technique. The experimental data were analyzed using a composite two-layer model. The results obtained strongly support the existing studies, indicating the presence of a high percentage of in the composition of porous silicon material.
Keywords
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