Visible photoluminescence of Ge microcrystals embedded in SiO2 glassy matrices
Open Access
- 9 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (24), 3168-3170
- https://doi.org/10.1063/1.105773
Abstract
Ge microcrystals embedded in SiO2 glassy matrices were formed by a radio-frequency magnetron cosputtering technique and then annealed at 800 °C for 30 min. The average radius of the Ge microcrystals in SiO2 was determined to be about 3 nm by means of Raman spectroscopy and high resolution electron microscope. The annealed sample showed a strong room temperature luminescence with a peak at 2.18 eV. This is consistent with quantum confinement of electrons and holes.Keywords
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