Porous silicon formation: A quantum wire effect
- 25 February 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (8), 856-858
- https://doi.org/10.1063/1.104512
Abstract
Porous silicon layers grown on nondegenerated p-type silicon electrodes in hydrofluoric acid electrolytes are translucent for visible light, which is equivalent to an increased band gap compared to bulk silicon. It will be shown that a two-dimensional quantum confinement (quantum wire) in the very narrow walls between the pores not only explains the change in band-gap energy but may also be the key to better understanding the dissolution mechanism that leads to porous silicon formation.Keywords
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