SnSe2 field-effect transistors with high drive current
- 23 December 2013
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (26), 263104
- https://doi.org/10.1063/1.4857495
Abstract
SnSe2 field-effect transistors fabricated using mechanical exfoliation are reported. Substrate-gated devices with source-to-drain spacing of 0.5 μm have been fabricated with drive current of 160 μA/μm at T = 300 K. The transconductance at a drain-to-source voltage of Vds = 2 V increases from 0.94 μS/μm at 300 K to 4.0 μS/μm at 4.4 K, while the field-effect mobility increases from 8.6 cm2/Vs at 300 K to 28 cm2/Vs at 77 K. The conductance at Vds = 50 mV shows an activation energy of only 5.5 meV, indicating the absence of a significant Schottky barrier at the source and drain contacts.Keywords
Funding Information
- NSF (ECCS-1102278)
This publication has 13 references indexed in Scilit:
- Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistorsApplied Physics Letters, 2013
- Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect TransistorsNano Letters, 2013
- High Performance Multilayer MoS2 Transistors with Scandium ContactsNano Letters, 2012
- High on/off ratio field effect transistors based on exfoliated crystalline SnS2nano-membranesNanotechnology, 2012
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layersApplied Physics Letters, 2012
- Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behaviorApplied Physics Letters, 2012
- Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like StructureThe Journal of Physical Chemistry C, 2012
- Electronic and optical switching of solution-phase deposited SnSe2 phase change memory materialJournal of Applied Physics, 2011
- Single-layer MoS2 transistorsNature Nanotechnology, 2011
- Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity ruleJournal of Applied Physics, 1999