High on/off ratio field effect transistors based on exfoliated crystalline SnS2nano-membranes
- 13 December 2012
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 24 (2), 025202
- https://doi.org/10.1088/0957-4484/24/2/025202
Abstract
We report the implementation of field effect transistors based on exfoliated nano-membranes of a layered two-dimensional semiconductor SnS(2), which exhibit an on/off ratio exceeding 2 × 10(6) and a carrier mobility of ∼1 cm(2) V(-1) s(-1). The results demonstrate the great potential of SnS(2), a layered semiconductor with finite band gap, as the building block for future nanoelectronic applications complementary to graphene-based materials with zero or small band gaps.Keywords
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