Defect identification in semiconductors with positron annihilation: Experiment and theory

Abstract

Positron annihilation spectroscopy is particularly suitable for studying vacancy-type defects in semiconductors. Combining state-of-the-art experimental and theoretical methods allows for detailed identification of the defects and their chemical surroundings. Also charge states and defect levels in the band gap are accessible. In this review the main experimental and theoretical analysis techniques are described. The usage of these methods is illustrated through examples in technologically important elemental and compound semiconductors. Future challenges include the analysis of noncrystalline materials and of transient defect-related phenomena.DOI: http://dx.doi.org/10.1103/RevModPhys.85.158320 MoreReceived 13 February 2013Published 14 November 2013© 2013 American Physical Society