Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation
Open Access
- 24 October 2010
- journal article
- research article
- Published by Springer Science and Business Media LLC in Nanoscale Research Letters
- Vol. 5 (12), 1942-1947
- https://doi.org/10.1007/s11671-010-9818-4
Abstract
The potential of positron annihilation spectroscopy (PAS) for defect characterization at the atomic scale in semiconductors has been demonstrated in thin multilayer structures of SiGe (50 nm) grown on UTB (ultra-thin body) SOI (silicon-on-insulator). A slow positron beam was used to probe the defect profile. The SiO2/Si interface in the UTB-SOI was well characterized, and a good estimation of its depth has been obtained. The chemical analysis indicates that the interface does not contain defects, but only strongly localized charged centers. In order to promote the relaxation, the samples have been submitted to a post-growth annealing treatment in vacuum. After this treatment, it was possible to observe the modifications of the defect structure of the relaxed film. Chemical analysis of the SiGe layers suggests a prevalent trapping site surrounded by germanium atoms, presumably Si vacancies associated with misfit dislocations and threading dislocations in the SiGe films.Keywords
This publication has 17 references indexed in Scilit:
- Positron annihilation studies of defects in Si1-xGex/SOI heterostructuresphysica status solidi (c), 2009
- Structural evolution in Ar+ implanted Si-rich silicon oxideJournal of Applied Physics, 2003
- Positron Annihilation in SemiconductorsSpringer Series in Solid-State Sciences, 1999
- Low-temperature heteroepitaxy by LEPECVDThin Solid Films, 1998
- Application of hydrogen ion beams to Silicon On Insulator material technologyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
- Characterization of defects in Si and SiO2−Si using positronsJournal of Applied Physics, 1994
- Relaxation of SiGe thin films grown on Si/SiO2 substratesJournal of Applied Physics, 1994
- SiO2 films deposited on Si substrates studied by monoenergetic positron beamsJournal of Applied Physics, 1994
- Analysis of positron profiling data by means of ‘‘VEPFIT’’AIP Conference Proceedings, 1991
- Profiling multilayer structures with monoenergetic positronsPhysical Review B, 1987