p -type Zn1−xMgxO films with Sb doping by radio-frequency magnetron sputtering
- 13 November 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (20), 202102
- https://doi.org/10.1063/1.2388254
Abstract
Sb-doped Zn 1 − x Mg x O films were grown on c -plane sapphire substrates by radio-frequency magnetron sputtering. The p -type conduction of the films ( 0.05 ⩽ x ⩽ 0.13 ) was confirmed by Hall measurements, revealing a hole concentration of 10 15 – 10 16 cm − 3 and a mobility of 0.6 – 4.5 cm 2 ∕ V s . A p - n homojunction comprising an undoped ZnO layer and an Sb-doped Zn 0.95 Mg 0.05 O layer shows a typical rectifying characteristic. Sb-doped p -type Zn 1 − x Mg x O films also exhibit a changeable wider band gap as a function of x , implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices.This publication has 21 references indexed in Scilit:
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