Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films
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- 21 February 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (9), 1237-1239
- https://doi.org/10.1063/1.1350632
Abstract
We describe the structural and optical properties of II–VI oxide alloys, and grown by pulsed-laser deposition. Single-phase alloyed films of (Mg,Zn)O and (Cd,Zn)O with c-axis orientations were epitaxially grown on sapphire (0001) substrates. The maximum magnesium and cadmium concentrations (x=0.33 and y=0.07, respectively) were significantly larger than the thermodynamic solubility limits. The band gap energies systematically changed from 3.0 to 4.0 eV at room temperature. The photoluminescence peak energy deduced at 4.2 K could be tuned from 3.19 to 3.87 eV by using and at both ends, respectively. The lattice constants of the a axis were monotonically increasing functions of the concentrations of both alloys. The exciton–phonon coupling strength was determined in grown on a lattice-matched substrate.
Keywords
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