Sub-10 nm imprint lithography and applications
- 1 November 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (6), 2897-2904
- https://doi.org/10.1116/1.589752
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Nanoscale silicon field effect transistors fabricated using imprint lithographyApplied Physics Letters, 1997
- Imprint lithography with sub-10 nm feature size and high throughputMicroelectronic Engineering, 1997
- Nanoscale replication for scanning probe data storageApplied Physics Letters, 1996
- Imprint Lithography with 25-Nanometer ResolutionScience, 1996
- Imprint of sub-25 nm vias and trenches in polymersApplied Physics Letters, 1995
- Single electron and hole quantum dot transistors operating above 110 KJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscopeApplied Physics Letters, 1994
- Absence of resolution degradation in X-ray lithography for λ from 4.5nm to 0.83nmMicroelectronic Engineering, 1990
- Imaging and modification of polymers by scanning tunneling and atomic force microscopyJournal of Applied Physics, 1988
- 250-Å linewidths with PMMA electron resistApplied Physics Letters, 1978