Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth
- 30 November 2006
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 298, 272-275
- https://doi.org/10.1016/j.jcrysgro.2006.10.129
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Dislocation Density of GaN Grown by Hydride Vapor Phase EpitaxyMRS Internet Journal of Nitride Semiconductor Research, 2001
- Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaNJapanese Journal of Applied Physics, 1998
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniquesApplied Physics Letters, 1996
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters, 1992