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Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
Home
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Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques
F. A. Ponce
F. A. Ponce
D. Cherns
D. Cherns
WY
W. T. Young
W. T. Young
JS
J. W. Steeds
J. W. Steeds
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5 August 1996
journal article
Published by
AIP Publishing
in
Applied Physics Letters
Vol. 69
(6)
,
770-772
https://doi.org/10.1063/1.117886
Abstract
No abstract available
Keywords
GALLIUM NITRIDES
EPITAXIAL LAYERS
DISLOCATIONS
TEM
ELECTRON DIFFRACTION
BURGERS VECTOR
INTERFACES
Cited by 183 articles