Fermi level depinning at the germanium Schottky interface through sulfur passivation
- 12 April 2010
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 96 (15), 152108
- https://doi.org/10.1063/1.3387760
Abstract
We demonstrate the depinning of Fermi level on both p- and n-type germanium after sulfur passivation by aqueous ( NH 4 ) 2 S treatment. Schottky contacts realized using metals with a wide range of work functions produce nearly ideal behavior confirming that the Fermi level is depinned. Examination of the passivated surface using x-ray photoelectron spectroscopy reveals bonding between Ge and sulfur. It is shown that good Ohmic contacts to n-type Ge and a hole barrier height ( ϕ Bp ) of 0.6 eV to p-type Ge can be achieved after this passivation treatment, with Zr Schottky contacts. This is the highest ϕ Bp reported so far.Keywords
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