Trap Density of States Measured by Photon Probe on Amorphous-InGaZnO Thin-Film Transistors
- 4 February 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 32 (3), 336-338
- https://doi.org/10.1109/led.2010.2102739
Abstract
Trap density of states (DOS) for two amorphous InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ~10 10 cm -2 as its totally integrated trap density.Keywords
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