Metal contacts to n-type GaN
- 1 April 1998
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Electronic Materials
- Vol. 27 (4), 255-260
- https://doi.org/10.1007/s11664-998-0396-5
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Ohmic contacts and schottky barriers to n-GaNJournal of Electronic Materials, 1996
- Schottky barrier properties of various metals on n-type GaNSemiconductor Science and Technology, 1996
- Schottky contact and the thermal stability of Ni on n-type GaNJournal of Applied Physics, 1996
- Schottky barriers on n-GaN grown on SiCJournal of Electronic Materials, 1996
- High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaNApplied Physics Letters, 1996
- High temperature characteristics of Pd Schottky contacts on n-type GaNElectronics Letters, 1996
- Characterisation of Pd Schottky barrier on n-type GaNElectronics Letters, 1996
- Study of Schottky barriers on n-type GaN grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1995
- Electrical characterisation of Ti Schottky barriers on n-type GaNElectronics Letters, 1994
- Schottky barrier on n-type GaN grown by hydride vapor phase epitaxyApplied Physics Letters, 1993