Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
- 8 November 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (19), 2676-2678
- https://doi.org/10.1063/1.110417
Abstract
A Schottky barrier on unintentionally doped n‐type GaN grown by hydride vapor phase epitaxy was obtained and characterized. Using vacuum evaporated gold as the Schottky barrier contact and aluminum for the ohmic contact, good quality diodes were obtained. The forward current ideality factor was n∼1.03 and the reverse bias leak current below 1×10−10 A at a reverse bias of −10 V. The barrier height φBn was determined to be 0.844 and 0.94 eV by current‐voltage and capacitance measurements, respectively.Keywords
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