Role of hydrogen in the surface passivation of crystalline silicon by sputtered aluminum oxide
- 26 August 2010
- journal article
- research article
- Published by Wiley in Progress in Photovoltaics: Research and Applications
- Vol. 19 (3), 320-325
- https://doi.org/10.1002/pip.1031
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVDElectrochemical and Solid-State Letters, 2010
- High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor DepositionApplied Physics Express, 2009
- Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacksPhysica Status Solidi (RRL) – Rapid Research Letters, 2009
- Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxideApplied Physics Letters, 2009
- Effective surface passivation of crystalline silicon by rf sputtered aluminum oxidePhysica Status Solidi (RRL) – Rapid Research Letters, 2009
- On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3Journal of Applied Physics, 2008
- High efficiency n-type Si solar cells on Al2O3-passivated boron emittersApplied Physics Letters, 2008
- Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3Progress in Photovoltaics: Research and Applications, 2008
- Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3Applied Physics Letters, 2007
- Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3Applied Physics Letters, 2006