Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
- 10 July 2009
- journal article
- Published by Wiley in Physica Status Solidi (RRL) – Rapid Research Letters
- Vol. 3 (5), 160-162
- https://doi.org/10.1002/pssr.200903140
Abstract
No abstract availableKeywords
Funding Information
- Australian Research Council
This publication has 11 references indexed in Scilit:
- On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3Journal of Applied Physics, 2008
- High efficiency n-type Si solar cells on Al2O3-passivated boron emittersApplied Physics Letters, 2008
- Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3Progress In Photovoltaics, 2008
- Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3Applied Physics Letters, 2007
- Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative chargeSolar Energy Materials and Solar Cells, 2006
- Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3Applied Physics Letters, 2006
- High efficiency, magnetron sputtered CdS/CdTe solar cellsSolar Energy, 2004
- Multi-component high-K gate dielectrics for the silicon industryMicroelectronic Engineering, 2001
- Overview on SiN surface passivation of crystalline silicon solar cellsSolar Energy Materials and Solar Cells, 2001
- Low‐Temperature Surface Passivation of Silicon for Solar CellsJournal of the Electrochemical Society, 1989