Sputtering of amorphous silicon films by 0.5 to 5 keV Ar+ ions
- 30 September 1979
- journal article
- Published by Elsevier BV in Applications of Surface Science
- Vol. 3 (2), 251-271
- https://doi.org/10.1016/0378-5963(79)90024-2
Abstract
No abstract availableThis publication has 54 references indexed in Scilit:
- Festkörperzerstäubung durch IonenbeschußPublished by Springer Science and Business Media LLC ,2007
- On the influence of reactive gases on sputtering and secondary ion emissionApplied Physics A, 1978
- Surface characterization: Present status and the need for standardsApplications of Surface Science, 1978
- Sputtering—Surface changes induced by ion bombardmentProgress in Surface Science, 1976
- Argon ion etching in a reactive gasJournal of Materials Science, 1973
- Techniques for elemental composition profiling in thin filmsC R C Critical Reviews in Solid State Sciences, 1973
- Untersuchungen zur Festkörperzerstäubung bei schiefwinkligem Ionenbeschuß polykristalliner Metalloberflächen im Energiebereich um 1 keVThe European Physical Journal A, 1973
- Sputtering and Strain of Silicon by Ion ImplantationJournal of Applied Physics, 1971
- Sputtering experiments in the high energy regionNuclear Instruments and Methods, 1961
- Collection and sputtering experiments with noble gas ionsNuclear Instruments and Methods, 1961