Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis
- 26 July 2010
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (4)
- https://doi.org/10.1063/1.3474604
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Edge-enhanced Raman scattering in Si nanostripesApplied Physics Letters, 2009
- Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross sectionApplied Physics Letters, 2007
- High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structuresApplied Physics Letters, 2006
- Strain relaxation in strained-Si layers on SiGe-on-insulator substratesSemiconductor Science and Technology, 2006
- Combining high resolution and tensorial analysis in Raman stress measurements of siliconJournal of Applied Physics, 2003
- Polarized off-axis Raman spectroscopy: A technique for measuring stress tensors in semiconductorsJournal of Applied Physics, 1999
- Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuitsSemiconductor Science and Technology, 1996
- Piezo-Raman measurements and anharmonic parameters in silicon and diamondPhysical Review B, 1990
- A lattice theory of morphic effects in crystals of the diamond structureAnnals of Physics, 1970
- Effect of static uniaxial stress on the Raman spectrum of siliconSolid State Communications, 1970