Edge-enhanced Raman scattering in Si nanostripes
- 30 March 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 94 (13), 131907
- https://doi.org/10.1063/1.3110964
Abstract
We show both theoretically and experimentally that at the 364 nm excitation wavelength, the Raman signal is strongly enhanced within a local ( wide) area at the Si stripe edge when both incident and scattered lights are polarized parallel to the stripe. This enhancement effect results from a high concentration of the light electric field at the stripe edge and allows single nanowire Raman measurement as well as local stress detection at the stripe edges in Si device structures.
This publication has 6 references indexed in Scilit:
- Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross sectionApplied Physics Letters, 2007
- High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structuresApplied Physics Letters, 2006
- Raman stress maps from finite-element models of silicon structuresJournal of Applied Physics, 2006
- Stress from isolation trenches in silicon substratesJournal of Applied Physics, 1990
- Distribution of light at and near the focus of high-numerical-aperture objectivesJournal of the Optical Society of America A, 1986
- The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductorsSolid State Communications, 1986