Electronic properties of In2O3 surfaces
- 25 September 2000
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (13), 2009-2011
- https://doi.org/10.1063/1.1312199
Abstract
Surfaces of reactively evaporated In2O3 films were investigated in situ by synchrotron-excited photoemission. Work function, valence band maximum, and electronic states in the band gap were determined as a function of oxygen pressure. Surface and bulk electronic properties can only be explained consistently with the assumption of a surface depletion layer.Keywords
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