Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

Abstract

Materials showing reversible resistance switching between high-resistance state and low-resistance state at room temperature are attractive for today’s semiconductor technology. In this letter, the reproducible hysteresis and resistive switching characteristics of metal-${\mathrm{Cu}}_x\mathrm{O}$ -metal $\left(M\text{-}{\mathrm{Cu}}_x\mathrm{O}\text{-}M\right)$ heterostructures driven by low voltages are demonstrated. The fabrication of the $M\text{-}{\mathrm{Cu}}_x\mathrm{O}\text{-}M$ heterostructures is fully compatible with the standard complementary metal-oxide semiconductor process. The hysteresis and resistive switching behavior are discussed. The good retention characteristics are exhibited in the $M\text{-}{\mathrm{Cu}}_x\mathrm{O}\text{-}M$ heterostructures by the accurate controlling of the preparation parameters.