Trapping-detrapping defects in single crystal diamond films grown by chemical vapor deposition
- 21 November 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (22), 222101
- https://doi.org/10.1063/1.2135384
Abstract
High-quality single-crystaldiamondfilms were homoepitaxiallygrown by chemical vapor deposition onto low cost high-pressure high-temperature diamond substrates. The transport properties of the obtained samples were studied by photoresponse characterization. Fast ultraviolet (5 ns) laser pulses at 215 nm were used as a probe. The time evolution of the photoinduced current was observed to closely reproduce the laser pulse shape, thus indicating a time response lower than the adopted laser pulse duration. Very stable and reproducible response was measured, so that neither priming nor memory effects are observed. However, a minor slow component shows up in the charge-integrated sample response, whose temperature dependence was investigated in a − 25 – + 50 ° C range. A systematic speed up of this slow component of the sample signal is observed, indicating the presence of shallow centers producing trapping-detrapping effects. The experimental results are discussed in the framework of a trapping-detrapping model affecting the charge transport mechanism and an activation energy of E a = 0.4 eV was derived for the shallow trapping centers.Keywords
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