Synthesis and characterization of a single-crystal chemical-vapor-deposition diamond particle detector

Abstract

The growth conditions and the detection properties of a homoepitaxial diamond film, deposited in Roma “Tor Vergata” University Laboratories by microwave chemical vapor deposition on a high-pressure high-temperature single-crystal substrate are reported. An energy resolution as low as 1.1% was achieved when irradiating the device with 5.5 MeV ${}^{241}\mathrm{Am}$ $\alpha$ -particles. The dependence of the charge collection efficiency and the energy resolution on the applied voltage are reported as well. A clear saturation plateau was observed in both curves. Preliminary results with 14.8 MeV neutron irradiation are reported, showing a well separated ${}^{12}\mathrm{C}(n,{\alpha }_0){}^9\mathrm{Be}$ reaction peak.