Band structure calculations of Si–Ge–Sn alloys: achieving direct band gap materials
- 31 May 2007
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 22 (7), 742-748
- https://doi.org/10.1088/0268-1242/22/7/012
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on SiliconAnnual Review of Materials Research, 2006
- Compliant tin-based buffers for the growth of defect-free strained heterostructures on siliconApplied Physics Letters, 2006
- Optical constants and interband transitions of Ge1−xSnx alloys (x<0.2) grown on Si by UHV-CVDThin Solid Films, 2004
- Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substratesSolid State Communications, 2003
- Direct energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systemsMaterials Science and Engineering B, 2001
- Interband Transitions inAlloysPhysical Review Letters, 1997
- Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature-modulated molecular beam epitaxyApplied Physics Letters, 1995
- Direct-gap Ge/GeSn/Si and GeSn/Ge/Si heterostructuresSuperlattices and Microstructures, 1993
- Predicted band gap of the new semiconductor SiGeSnJournal of Applied Physics, 1991
- Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural propertiesApplied Physics Letters, 1990