Single-crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties
- 27 August 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (9), 875-877
- https://doi.org/10.1063/1.104264
Abstract
Short-period strained-layer α-Sn/Ge superlattices lattice matched to Ge(001) substrates have been synthesized for the first time. The thin, tetragonally distorted α-Sn layers are stabilized by a modified molecular beam epitaxy technique with large modulation of substrate temperature during growth. Optimization of growth conditions is achieved via in situ Auger electron spectroscopy and low-energy electron diffraction. This new kind of strained-layer superlattice is characterized by transmission electron microscopy, x-ray diffraction, and Raman scattering. Distinct superlattice effects are observed in the structural and phonon properties of the samples.Keywords
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