Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction
- 22 May 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Applied Physics A
- Vol. 126 (6), 1-8
- https://doi.org/10.1007/s00339-020-03622-2
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (616340084, 61704188)
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