High speed carrier-depletion modulators with 14V-cm V_πL integrated on 025μm silicon-on-insulator waveguides
Open Access
- 31 March 2010
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 18 (8), 7994-7999
- https://doi.org/10.1364/oe.18.007994
Abstract
We demonstrate a very efficient high speed silicon modulator with an ultralow π-phase-shift voltage-length product VπL = 1.4V-cm. The device is based on a Mach-Zehnder interferometer (MZI) fabricated using 0.25μm thick silicon-on-insulator (SOI) waveguide with offset lateral PN junctions. Optimal carrier-depletion induced index change has been achieved through the optimization of the overlap region of carriers and photons. The 3dB bandwidth of a typical 1mm long device was measured to be more than 12GHz. An eye-diagram taken at a transmission rate of 12.5Gb/s confirms the high speed capability of the device.This publication has 25 references indexed in Scilit:
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