An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part I: Capturing Effects of Carrier Degeneracy, Drain-Bias Dependence of Gate Capacitance, and Nonlinear Channel-Access Resistance
- 3 August 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 62 (9), 2786-2793
- https://doi.org/10.1109/ted.2015.2457781
Abstract
In this paper, an improved physics-based virtual-source (VS) model to describe transport in quasi-ballistic transistors is discussed. The model is based on the Landauer scattering theory, and incorporates the effects of: 1) degeneracy on thermal velocity and mean free path of carriers in the channel; 2) drain-bias dependence of gate capacitance and VS charge, including the effects of band nonparabolicity; and 3) nonlinear resistance of the extrinsic device region on g m -degradation at high drain currents in the channel. The improved charge model captures the phenomenon of reduction in VS charge under nonequilibrium transport conditions in a quasi-ballistic transistor.Keywords
This publication has 23 references indexed in Scilit:
- Analysis of Carrier Transport in Short-Channel MOSFETsIEEE Transactions on Electron Devices, 2014
- On the Interpretation of Ballistic Injection Velocity in Deeply Scaled MOSFETsIEEE Transactions on Electron Devices, 2012
- Near-Equilibrium TransportLessons from Nanoscience: A Lecture Notes Series, 2011
- On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficientsJournal of Applied Physics, 2010
- Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual SourcePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- Full-band and atomistic simulation of realistic 40 nm InAs HEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- A compact scattering model for the nanoscale double-gate MOSFETIEEE Transactions on Electron Devices, 2002
- On the performance limits for Si MOSFETs: a theoretical studyIEEE Transactions on Electron Devices, 2000
- Nonparabolic tendency of electron effective mass estimated by confined states in In0.53Ga0.47As/In0.52Al0.48As multi-quantum-well structuresSuperlattices and Microstructures, 1999
- Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductorSolid-State Electronics, 1982