Analysis of Carrier Transport in Short-Channel MOSFETs
- 9 January 2014
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 61 (2), 351-358
- https://doi.org/10.1109/ted.2013.2294380
Abstract
A method for extracting transport parameters in short-channel FETs is presented in the context of the Lundstrom model for quasi-ballistic short-channel FETs. The parameters extracted from measured data are unidirectional thermal velocity, critical length, and mean free path at low and high drain biases. The method is based on an analysis of the channel length dependence of apparent mobility and virtual-source (VS) velocity, which are obtained by fitting the VS model to measured data. Data from (100)-oriented undoped-body extremely thin silicon-on-insulator FETs with neutral stress liners are used to validate the method. Since this method does not assume any theoretical knowledge of band structure parameters, it can be applied to short-channel FETs with any geometry, any channel material, and with unknown levels of channel stress.Keywords
This publication has 44 references indexed in Scilit:
- Room-temperature carrier transport in high-performance short-channel Silicon nanowire MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2012
- Possible observation of ballistic contact resistance in wide Si MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2012
- Undoped-Body Extremely Thin SOI MOSFETs With Back GatesIEEE Transactions on Electron Devices, 2009
- A Simple Semiempirical Short-Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and Employing Only Physical ParametersIEEE Transactions on Electron Devices, 2009
- MOSFET Performance Scaling—Part I: Historical TrendsIEEE Transactions on Electron Devices, 2008
- High-Performance Undoped-Body 8-nm-Thin SOI Field-Effect TransistorsIEEE Electron Device Letters, 2008
- Low ballistic mobility in submicron HEMTsIEEE Electron Device Letters, 2002
- Electronic Transport in Mesoscopic SystemsPublished by Cambridge University Press (CUP) ,1995
- Monte-Carlo simulation of submicrometer Si n-MOSFETs at 77 and 300 KIEEE Electron Device Letters, 1988
- Conductance of small semiconductor devicesSolid State Communications, 1981