A compact scattering model for the nanoscale double-gate MOSFET
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 49 (3), 481-489
- https://doi.org/10.1109/16.987120
Abstract
An analytically compact model for the nanoscale double gate metal-oxide semiconductor field effect transistor (MOSFET) based on McKelvey's flux theory is developed. The model is continuous above and below threshold and from the linear to saturation regions. Most importantly, it describes nanoscale MOSFETs from the diffusive to ballistic regimes. In addition to its use in exploring the limits and circuit applications of double gate MOSFETs, the model also serves as an example of how semiclassical scattering theory can be used to develop physically sound models for nanoscale transistors.Keywords
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