SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices—Part I: NBTI
- 29 November 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (1), 396-404
- https://doi.org/10.1109/ted.2012.2225625
Abstract
We report extensive experimental results of the negative bias temperature instability (NBTI) reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The results clearly show that this high-mobility channel technology offers significantly improved NBTI robustness compared with Si-channel devices, which can solve the reliability issue for sub-1-nm equivalent-oxide-thickness devices. A physical model is proposed to explain the intrinsically superior NBTI robustness.Keywords
This publication has 21 references indexed in Scilit:
- Considerations for Ultimate CMOS ScalingIEEE Transactions on Electron Devices, 2012
- Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of Body BiasPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Origin of NBTI variability in deeply scaled pFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Improvements of NBTI reliability in SiGe p-FETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2010
- Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETsMicroelectronic Engineering, 2009
- SiGe SEG Growth for Buried Channels p-MOS DevicesECS Transactions, 2009
- ESR of interfaces and nanolayers in semiconductor heterostructuresPublished by Elsevier BV ,2008
- Ubiquitous relaxation in BTI stressing—New evaluation and insightsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008
- Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-MeasurementsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Vacancy and interstitial defects in hafniaPhysical Review B, 2002