Improvement in NBTI reliability of Si-passivated Ge/high-k/metal-gate pFETs
- 30 September 2009
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 86 (7-9), 1582-1584
- https://doi.org/10.1016/j.mee.2009.03.061
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Investigation of Bias-Temperature Instability in work-function-tuned high-k/metal-gate stacksJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2009
- Electrical and reliability characterization of metal-gate/HfO2/Ge FET’s with Si passivationMicroelectronic Engineering, 2007
- Electronic structure of insulator-confined ultra-thin Si channelsMicroelectronic Engineering, 2007
- NBTI degradation: From physical mechanisms to modellingMicroelectronics Reliability, 2006