Effect of Gd and Si co-doping on the band alignment and electrical properties of HfO2 dielectric films prepared by atomic layer deposition
- 1 February 2021
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science: Materials in Electronics
- Vol. 32 (4), 4815-4822
- https://doi.org/10.1007/s10854-020-05220-7
Abstract
No abstract availableFunding Information
- National Natural Science Foundation of China (52073142, 51721001, 51802150)
- Natural Science Foundation of Jiangsu Province (BK20201252, BK20170645)
This publication has 43 references indexed in Scilit:
- Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivationApplied Surface Science, 2013
- Atomic Layer Deposition of Gd-Doped HfO[sub 2] Thin FilmsJournal of the Electrochemical Society, 2010
- Atomic Layer Deposition: An OverviewChemical Reviews, 2009
- Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent DielectricsJournal of the Electrochemical Society, 2009
- Atomic Layer Deposition of Lu Silicate Films Using [(Me[sub 3]Si)[sub 2]N][sub 3]LuJournal of the Electrochemical Society, 2006
- Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water processJournal of Applied Physics, 2005
- Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric FilmsChemistry of Materials, 2004
- Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectricsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctionsApplied Physics Letters, 2000
- Hafnium and zirconium silicates for advanced gate dielectricsJournal of Applied Physics, 2000