Atomic Layer Deposition of Lu Silicate Films Using [(Me[sub 3]Si)[sub 2]N][sub 3]Lu
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 153 (11), F271-F276
- https://doi.org/10.1149/1.2347109
Abstract
Rare-earth silicates are promising materials for future microelectronic devices based on high dielectric constant dielectrics. In this work, we report the investigation of Lu silicate films deposited using atomic layer deposition on Si(100). The films were grown from tris[bis(trimethylsilyl)amido]lutetium— [(Me3Si)2N]3Lu[(Me3Si)2N]3Lu (where Me=CH3Me=CH3 ), which can supply both Lu and Si. Water or ozone were used as oxygen sources. The films deposited using the latter are shown to be richer in Si. The films are amorphous as grown, have a low physical roughness, an electronic density lower than expected for both crystalline and amorphous stoichiometric Lu silicates, and promote a SiO2SiO2 -rich interfacial layer on Si(100). Crystallization, observed only in films deposited using O3O3 , has an onset temperature above 900°C900°C . Annealing at 950°C950°C induces film densification. Signs of crystallization are observed only in the electron diffraction patterns of the annealed film deposited using O3O3 as oxygen source, but the resulting crystallographic phases cannot be unequivocally identified. The κ values of the dielectric stacks are between 5 and 7. The conduction band offset between the Lu silicate layer and Si(100) measured for the film deposited using O3O3 is 2.2eV2.2eV .Keywords
This publication has 41 references indexed in Scilit:
- Growth of Gadolinium Oxide This Films by Liquid Injection MOCVD Using a New Gadolinium Alkoxide PrecursorChemical Vapor Deposition, 2004
- Growth of Neodymium Oxide This Films by Liquid Injection MOCVD Using a New Neodymium Alkoxide PrecursorChemical Vapor Deposition, 2004
- Energy-band diagram of metal/Lu2O3/silicon structuresApplied Physics Letters, 2004
- Silicide formation at HfO2–Si and ZrO2–Si interfaces induced by Ar+ ion bombardmentJournal of Vacuum Science & Technology A, 2004
- Crystallisation kinetics and density profiles in ultra-thin hafnia filmsZeitschrift für Physik B Condensed Matter, 2004
- Spectroscopic study of chemical phase separation in zirconium silicate alloysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003
- Electronic structure of high-k transition metal oxides and their silicate and aluminate alloysJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002
- Analysis of the vibrational mode spectra of amorphous SiO2 filmsJournal of Applied Physics, 1995
- Initial stages of oxygen adsorption on Si(111): The stable statePhysical Review B, 1989
- Three-co-ordination in lanthanide chemistry: tris[bis(trimethylsilyl)amido]lanthanide(III) compoundsJournal of the Chemical Society, Chemical Communications, 1972