Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation
- 1 January 2013
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 264, 783-786
- https://doi.org/10.1016/j.apsusc.2012.10.127
Abstract
No abstract availableKeywords
Funding Information
- Natural Science Foundation of China (10974085, 50932001)
- State Key Program for Basic Research of China (2009ZX02039-004, 2011CB922104, 2009CB929500)
- Fundamental Research Funds for the Central Universities
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