Charge transport mechanism in dielectrics: drift and diffusion of trapped charge carriers
Open Access
- 25 September 2020
- journal article
- research article
- Published by Springer Science and Business Media LLC in Scientific Reports
- Vol. 10 (1), 1-10
- https://doi.org/10.1038/s41598-020-72615-1
Abstract
In this study, we developed a continuum theory of the charge transport in dielectrics by trapped electrons and holes, which takes into account two separate contributions of the current of trapped charge carriers: the drift part and the diffusion one. It was shown that drift current is mostly dominant in the bulk, while the diffusion one reaches significant values near contacts. A comparison with other theoretical models and experiments shows a good agreement. The model can be extended to two- and three-dimensional systems. The developed model, formulated in partial differential equations, can be numerically implemented in the finite element method code.Funding Information
- Russian Science Foundation (16-19-00002)
This publication has 35 references indexed in Scilit:
- Electronic and optical properties of hafnia polymorphsMicroelectronic Engineering, 2011
- Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layerMicroelectronic Engineering, 2011
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresNature Materials, 2011
- Comprehensive Study of Pi-Gate Nanowires Poly-Si TFT Nonvolatile Memory With an HfO $_2$ Charge Trapping LayerIEEE Transactions on Nanotechnology, 2010
- Memristive switching mechanism for metal/oxide/metal nanodevicesNature Nanotechnology, 2008
- The missing memristor foundNature, 2008
- Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structuresJournal of Applied Physics, 2001
- Quantum model for phonon-assisted tunnel ionization of deep levels in a semiconductorPhysical Review B, 1982
- Tunneling to traps in insulatorsJournal of Applied Physics, 1972
- On Pre-Breakdown Phenomena in Insulators and Electronic Semi-ConductorsPhysical Review B, 1938