Stack engineering of TANOS charge-trap flash memory cell using high-κ ZrO2 grown by ALD as charge trapping layer
- 31 July 2011
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 88 (7), 1174-1177
- https://doi.org/10.1016/j.mee.2011.03.066
Abstract
No abstract availableKeywords
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