Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs
- 7 September 2020
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 67 (10), 4021-4026
- https://doi.org/10.1109/ted.2020.3019018
Abstract
This article reports the first comprehensive analysis of the reliability of hydrogen-terminated diamond metal semiconductor field-effect transistors (MESFETs) submitted to OFF-state stress. We demonstrate that stress induces an increase in ON-resistance and a shift in the threshold voltage, along with a decrease in the transconductance peak value. These effects are ascribed to the generation of defects at the diamond surface and/or in the upper semiconductor layers. The defects are generated both in the access regions and under the gate, and their activation energy is 0.30 eV.Keywords
Funding Information
- MIUR (Italian Ministry for Education) under the initiative “Departments of Excellence” (Law 232/2016)
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