Electrical degradation and recovery of dielectrics in n++-poly-Si/SiOx/SiO2/p-sub structures designed for application in low-voltage non-volatile memories
- 1 November 2001
- journal article
- Published by Elsevier BV in Microelectronics Reliability
- Vol. 41 (11), 1809-1813
- https://doi.org/10.1016/s0026-2714(01)00094-4
Abstract
No abstract availableKeywords
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